6
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
TYPICAL CHARACTERISTICS
245
6
0
400
0
25_C
85_C
3
1
200
100
Pin, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P
out
, OUTPUT POWER (WATTS) PULSED
300
18
24
50
30
70
100
60
50
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D
DRAIN EFFICIENCY
(
%
)
ηD
22
400
25_C
TC
=--30_C
85_C
Gps
40
250
107
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 250 W Peak, Pulse Width = 100
μsec,
Duty Cycle = 10%, and
ηD
= 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
106
105
103
110 130 150 170 190
MTTF (HOURS)
210 230
TC
=--30_C
20
18
55_C
VDD
=50Vdc
IDQ
= 250 mA
f = 1090 MHz
Pulse Width = 100
μsec
Duty Cycle = 10%
VDD
=50Vdc,IDQ
= 250 mA, f = 1090 MHz
Pulse Width = 100
μsec, Duty Cycle = 10%
104
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Y
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